摘要
在ＰＥＣＶＤ法制备的ａ－ＳｉＯｘＮｙ薄膜中首次观察到分立能级的红光发射，采用荧光激发谱研究了发光能级与其它能级之间的相互关系，建立了产生光跃迁的能级模型．
Luminescence in red was observed for the first time in amorphous SiOxNy thin film deposited by PECVD method, with wave lengths at 733um, 738um, and 748um respectively. Fluorescent excitation spectra were measured to study the interrelationship between the photoluminescent energy levels and other energy levels. A model for optical transition is established.
出处
《汕头大学学报（自然科学版）》
2000年第2期1-4,共4页
Journal of Shantou University：Natural Science Edition
基金
苏州大学薄膜重点实验室资助
