摘要
用等离子体增强辉光放电法制成ａＳｉ∶Ｈ∶Ｏ薄膜，未经任何后处理过程，观察到峰值分别位于３４０—３７０，４００—４３０以及７４０ｎｍ的三个光致发光（ＰＬ）带．这种紫外光发射既强又稳定，其强度与薄膜中的氧含量紧密相关，而后者可通过薄膜淀积过程中施加在其衬底上的直流偏压进行控制．前两个ＰＬ峰来源于ａＳｉ∶Ｈ∶Ｏ中与氧有关的色心。
Abstract Three photoluminescence (PL) bands at 340—370,400—430, and 740 nm were observed at room temperature in a Si∶H∶O films fabricated by plasma enhanced chemical vapor deposition without any post processing. The violet blue emission is very strong and stable, and its intensity is closely related to the oxygen content in the films, which can be controlled by the applied dc biases on the sample substrates during deposition. The first two PL peaks are ascribed to oxygen related colour centers in the a Si∶H∶O matrix, and the last one is ascribed to the quantum size effect of the nanocrystallites embedded in a Si∶H∶O matrix and the colour centers in the crystallites interfaces.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第2期378-384,共7页
Acta Physica Sinica
基金
国家自然科学基金
