摘要
本文对WSi_x,TiSi_x和PtSi_x与GaAs的肖特基接触进行了研究,比较了不同组分下这三种硅化物在快速退火和常规退火后的电阻率、与GaAs接触界面的热稳定性、化学稳定性及所形成肖特基结的电特性.结果表明:TiSi_x的电阻率仅约为WSi_x的1/3;WSi_(0.8)/GaAS界面和TiSi_2/GaAs界面均具有好的热稳定性和化学稳定性;PtSi_x/GaAs界面经500℃以上的热处理表现出热不稳定性.运用快速退火工艺,WSi_(0.8)及TiSi_2均可满足作为自对准GaAs MESFET栅极材料的要求.
In this paper, the thermal stability, chemical stability and electrical characteristics of WSix, TiSix and PtSix/GaAs contacts have been investigated. It has been found that the resistivity of TiSix film is only one-third of WSix's. Both TiSi2/ GaAs and WSi0.8/GaAs interface are of excellent thermal and chemical stability. The PtSix/GaAs interface remains thermal stability until 500℃. If using rapid thermal annealing, the WSi0.6 and TiSi2 films will be good gate materials for self-aligned GaAs MESFETs.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1991年第1期20-25,共6页
Research & Progress of SSE
基金
国家自然科学基金资助项目
