摘要
介绍了晶闸管器件的通态电流上升率di/dt参数及其损坏晶闸管器件的机理 ,并进一步介绍了提高晶闸管器件的通态di/dt耐量的设计和工艺方法 ,及应用过程中限制晶闸管阳极电路的电流上升率 。
In the article, we introduced the di/dt parameter and the theory of thyristor breakdowned by di/dt, and make further production about how to increase the di/dt of thyristor in design and technology, and the method of how to impose restrictions di/dt of the thyristor circuit to protect thyristor.
出处
《信息技术》
2002年第9期67-68,共2页
Information Technology
