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高g值加速度敏感芯片性能优化的结构分析 被引量:1

Structure Analysis on Performance Optimization of High g Acceleration Sensitive Chip
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摘要 随着微机电系统(MEMS)技术的发展,出现了高g值加速度敏感芯片,但因所受惯性力巨大,其综合性能难以提升,特别是过载和交叉耦合问题尤为突出。利用有限元法对带有微梁的高g值加速度敏感结构进行了仿真分析,给出了结构优化的设计方法,在保证灵敏度的同时,显著提高芯片固有频率和抗过载能力。在芯片的质量块与边框连接处设计了具有补偿作用的凹槽,有效减小了敏感芯片的交叉耦合。所设计量程为105g的敏感芯片满量程输出约为21.42 m V,固有频率约1.025 MHz,交叉耦合约4.24%,过载可达6.5倍量程以上。 With the development of Microelectromechanical Systems( MEMS) technology,high g acceleration sensitive chip has arisen.Since the huge inertia force,the chip's comprehensive performance is difficult to be improved,especially for the overload and cross coupling problem.Using finite element method,the simulation analysis on the high g acceleration sensitive structure with micro beam is carded out,and the design method of structural optimization is also given.The natural frequency and overload can be improved remarkably along with ensuring the sensitivity. The grooves with compensation effect is designed between mass block and frame,which can reduce the cross coupling of the chip effectively. After optimization design for the chip with 105 g range,the full scale output voltage,the cross coupling and the natural frequency are about 21.42 m V,4.24% and 1.025 MHz respectively,and the anti-overload ability can be more than 6.5 times the range.
作者 揣荣岩 刘升阳 张晓民 杨宇新 CHUAI Rong-yan1,LIU Sheng-yang1,ZHANG Xiao-min2,YANG Yu-xin1(1.School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110870,China;2.Xuzhou Autonic Electric Co.Ltd.,Xuzhou 221000,Chin)
出处 《仪表技术与传感器》 CSCD 北大核心 2018年第6期11-14,48,共5页 Instrument Technique and Sensor
关键词 加速度敏感芯片 微梁 凹槽 交叉耦合 固有频率 抗过载能力 acceleration sensitive chip micro beam grooves cross coupling natural frequency anti-overload ability
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