摘要
提出了一款4G频段全覆盖高输出功率高效率功率放大器。设计采用的是Cree公司提供的Ga N HEMT晶体管CGH40025F。基于F类功率放大器的设计理论,通过对晶体管的输入输出端均采用谐波控制网络,并将渐变式阻抗匹配这种宽带匹配方法应用到输入输出端的基波匹配当中。在实现二次谐波阻抗匹配至低阻抗区,三次谐波阻抗匹配至高阻抗区的同时基波阻抗被匹配至50Ω附近,从而有效提高了功率放大器的输出功率、效率和带宽。最终的测试结果表明在1.7~2.7 GHz频率范围内,漏极效率维持在62.55%~76%,输出功率在20~41W,增益在10 d B以上。仿真与实测结果基本一致。
This paper presents a high-power and high-efficiency power amplifier that can cover 4G LTE band. The transistor adopted in this work is CGH40025 F,which is a Ga N HEMT from Cree Company. Based on the design theory of Class-F power amplifier,the harmonic control network is adopted for the input and output of the transistor,and the steppedimpedance matching that often used in broadband matching circuit is applied to the fundamental matching of the input and output terminals. The second harmonic impedance is maintained in the low impedance zone,the third harmonic impedance is maintained in the high impedance zone while the fundamental impedance is matched to 50Ω,thus effectively improving the power amplifier output power,efficiency and bandwidth. The final measured results show that the drain efficiency between62. 55% and 76% within 1. 7 to 2. 7 GHz,20 ～ 41 W output power and over 10 d B gain level. Experimental results show remarkably good agreement with the simulation results.
出处
《微波学报》
CSCD
北大核心
2017年第4期55-58,共4页
Journal of Microwaves
基金
浙江省自然科学基金重点资助项目(LZ16F010001)
浙江省公益技术研究资助项目(2016C31070)
关键词
高效率
高输出功率
宽带
F类功率放大器
谐波控制
high efficiency
high output power
broadband
class-F power amplifiers
harmonic control
