摘要
VO2 在 6 8℃左右发生低温半导体态到高温金属态的相变 ,其电学和光学性质发生突变 ,在热、电开关和光存储介质方面有着广泛的应用 .然而钒和氧作用生成的薄膜是钒的各种价态的氧化物如VO、V2 O3、VO2 、V2 O5的混合体 ,要得到纯的VO2 很难 .人们做了很多工作来研究其电气化学的性质 ,并用了多种方法来镀制VO2 薄膜 .通过对VO2 一些有代表性的研究成果 ,从薄膜制备、降低相变温度以及VO2 应用前景等几个主要方面来介绍了VO2
VO 2 undergoes a semiconductor to metal phase transition at approximately 68 ℃ with abrupt change in electro optical property, and it can be widely used in thermal, electrical switching elements and optical storage media devices. The film of thermally oxidized V is a mixture of different oxides with variable valences such as VO V 2O 3 VO 2 V 2O 5, It is difficult to get pure VO 2. Much work has been done to investigate the electrochemical properties and numerous methods are used to prepare thin film of VO 2. Based on some characteristic of VO 2 thin film, new progress in study of VO 2 is introduced from the view point of film preparation, phase transition temperature reduction and application foreground.
出处
《哈尔滨工业大学学报》
EI
CAS
CSCD
北大核心
2002年第4期570-572,共3页
Journal of Harbin Institute of Technology
