摘要
介绍了一种SiC基GaN激光划片工艺。通过对划痕形貌、裂片效果、热效应和装配适应性四方面的分析,在几种氮化镓激光划片试验中优化得出高质量划切工艺,并通过小批量生产证明新工艺在良率、效率方面有一定的优势。
A laser dicing process for GaN on SiC substrate was presented in this paper. In different designs of laser dicing experiment, surface morphology, chipping ratio, heat impact and assemble quality were care{ully evaluated, and then an optimal singulation process was obtained.It was shown by small-batch production that the process has advantages in production yield and efficiency.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2017年第1期57-62,72,共7页
Research & Progress of SSE
