摘要
K_2CsSb光阴极具有10%左右的QE,可达数月的寿命,亚ps量级的响应时间,较低的本征发射度,因此成为高平均功率、高亮度电子源的首选。K_2CsSb光阴极广泛应用于高重频电子枪,如直流电子枪(Cornell),常温射频电子枪(LBNL),超导电子枪(BNL,HZB)等。为制备出稳定可重复长寿命具有较高量子效率的K_2CsSb光阴极,世界各大实验室均对K_2CsSb光阴极的制备工艺进行了大量的研究。本文详细介绍了K_2CsSb光阴极的制备设备及其制备工艺。
The K_2CsSb photocathode has high QE（4-10%）, low intrinsic emittance and long lifetime, and was widely used in high average power and high brightness electron guns, such as DC guns（Cornell）, NCRF guns（LBNL）, and SRF guns（HZB, BNL, KEK, etc.）.Many laboratories have investigated in K_2CsSb photocathode fabrication technology to prolong lifetime and to improve quantum efficiency.This paper gave a defailed description on the deposition system and fabrication technology of K_2CsSb photocathode.
出处
《真空》
CAS
2017年第1期63-66,共4页
Vacuum
