摘要
为了研究金属基复合材料在剧烈塑性变形(SPD)过程中增强颗粒与金属基体的界面连接机制,通过等径角挤扭(ECAP-T)工艺在较低温度下制备块状10wt%SiCP/Al基复合材料,并对经过1、2和4道次ECAP-T变形的SiC颗粒与纯Al之间的界面反应以及元素扩散进行了研究。通过TEM和XPS研究了界面和元素扩散,结果表明:即使在较低的外界制备温度下,Al和SiC颗粒表面的SiO2层也能够发生反应,形成主要由Al2O3组成的界面层。相比理论计算值,ECAP-T变形可以将Al的扩散系数提高约1016倍,增强扩散的原因主要是ECAP-T变形促使界面温度升高,且在铝基体内产生空位、位错和晶界等高密度晶格缺陷。
In order to research the interfacing connection mechanism between the reinforced particles and metal matrix of the metal matrix composites in a severe plastic deformation（SPD）process,equal channel angular pressing and torsion（ECAP-T）process was used to fabricate bulk 10wt% SiCP/Al matrix composites at lower heating temperature.And the interfacial reaction and element diffusion between SiC particles and pure Al,occurred by deformation of ECAP-T one,two and four passes,were investigated.The interface and element diffusion were studied by TEM and XPS.Results show that even at a lower processing temperature outside,Al can still react with SiO2 layer on the SiC particle surfaces and form an interface layer mainly made of Al2O3.The diffusion coefficient of Al is enhanced by about 1016 times during the ECAP-T deformation in comparison with the theoretically calculated value.The enhanced diffusion attribute to not only the increase of interface temperature but also the presence of a high density of lattice defects such as vacancies,dislocations produced by ECAP-T deformation.
出处
《复合材料学报》
EI
CAS
CSCD
北大核心
2016年第2期334-340,共7页
Acta Materiae Compositae Sinica
基金
国家自然科学基金(51175138)
教育部新世纪优秀人才支持计划(NCET-13-0765)
关键词
等径角挤扭
SiCP/Al基
界面反应
扩散系数
晶格缺陷
equal channel angular pressing and torsion
SiCP/Al matrix
interfacial reaction
diffusion coefficient
lattice defects
