期刊文献+

SOA中自非线性偏振旋转特性的理论研究

Research on self-induced nonlinear polarization rotation in a SOA
在线阅读 下载PDF
导出
摘要 研究半导体光放大器(SOA)中自非线性偏振旋转的特性。利用时域行波模型求解载流子和光子浓度的速率方程,利用k*p方法求解方程中包含应变效应的材料增益系数。在计算结果中,模拟出半导体光放大器的自非线性偏振旋转效应现象,并且证明可以利用自非线性偏振旋转效应实现光开关。最后,讨论输入信号的光强对光开关消光比的影响。 In the paper, self-induced nonlinear polarization rotation (SPR) in a Quantum Well Semiconductor Optical Amplifier (QW SOA) is theoretically investigated. The material gain calculation, including the strain effect in the active layer, is based on the k*p method. In our result, it is shown that the SPR phenomenon in a SOA and demonstrated that optical switching can be realized by the SPR effect. Then, the influence of input power of signal on the extinction ratio of optical switch is also discussed.
出处 《光通信技术》 北大核心 2015年第12期22-24,共3页 Optical Communication Technology
基金 南京工程学院引进人才科研启动基金(批准号:YKJ201320)资助
关键词 半导体光放大器 非线性偏振旋转 光开关 semiconductor optical amplifiers, nonlinear polarization rotation, optical switching
  • 相关文献

参考文献8

  • 1CALABRETTA N, LIU Y, HUIJSKENS F M, et al. Optical Signal Pro- cessing Based on Self-Induced Polarization Rotation in a Semiconductor Optical Amplifier[J]. Journal of Lightwave Technology,2004, 22(2): 372- 381.
  • 2SHUANG Z, CHONGQING W, MU C, et al. Poincare Sphere Method for Optimizing the Wavelength Converter Based on Nonlinear Polarization Rotation in Semiconductor Optical Amplifiers [J]. IEEE Journal of Quan- tum Electronics, 2009, 45(8): 1006-1013.
  • 3SONGNIAN F, WEN-DE Z, SHUM P, et al. Nonlinear Polarization Ro- tation in Semiconductor Optical Amplifiers With Linear Polarization Main- tenance[J]. IEEE Photonics Technology Letters, 2007, 19(23): 1931-1933.
  • 4DAILEY J, KOCH T. Simple Rules for Optimizing Asymmetries in SeA-Based Mach-zehnder Wavelength Converters[J]. Journal of Ligll, twave Technology, 2009, 27(11): 1480-1488.
  • 5QIN C, YU H L, XU E M, et al. Polarization dependence of patterning effects in quantum well semiconductor optical amplifier-based wavelength conversion[J]. Optica Applicata, 2015, XLV(2): 163-170.
  • 6BENNETT B R, SOREF R A, ALAMO J A D. Carder-induced change in refractive index of InP, GaAs and InGaAsP[J]. IEEE Journal of Quantum Electronics, 1990, 26(1): 113-122.
  • 7JIAN W, SCHWEIZER H C. A quantitative comparison of the classical rate-equation model with the carrier heating model on dynamics of the quantum-well laser: the role of carrier energy relaxation [J]. electron-hole interaction, and Auger effect, IEEE Journal of Quantum Electronics, 1997, 33(8): 1350-1359.
  • 8CHOW W W, KOCH S W, SARGENT M. Semiconductor-laser physics III[M]. Springer-Vcrlag New York:Inc., 1994.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部