摘要
监测 V_(BE)参数作为功率晶体管过流保护的取样信号是一种新方法。本文用实验验证了 V_(BE)在一定范围内是随 I_C 的增大而线性地增大的,其平均变化率不超过0.038V/A。根据此方法设计的保护电路用于单个晶体管时,也能对过流起到安全保护的作用,并用实验得到证明。
It is a new approach to use monitoring V_(BE) parameter as a sampling signal for overcurrent protection with power transistors.Practical experiments show that V_(BE) increases linearly as I_c increases,within certain limits,and the average rate of change does not exceed 0.038V/A.Experiments have confirmed that protection circuit designde accordingly may se- cure safety when applied to a single power transistor.
出处
《中国民航学院学报》
1991年第2期8-15,共8页
Journal of Civil Aviation University of China
关键词
功率晶体管
过流保护
采样
power transistor
overcurrent protection
sampling method
