摘要
本文对InP中的Be单注入和Be、p共注入及其退火特性进行了比较.SIMS和电化学C-V测试结果表明:采用Be、P共注入可以抑制退火过程中的Be扩散再分布,提高载流子的激活率,改善Pn结的电特性.与单注入相比,共注入样品Be的激活率提高了近一倍.pn结的击穿电压提高,漏电流明显减小.文中对共注入改善退火特性的机理进行了讨论.
The comparison between Be single-implantation and Be, P co-implantation has been made.SIMS and electrochemical C-V measurement show that the indiffusion and redistribution duringfurnace annealing have been suppressed by co-implant ation.This results in higher activationand better junction characteristics.Doubling in activation and an order of reduction in p-njunction's leakage current have been reached.The mechanism has been discussed.
关键词
离子注入
热退火
铍
磷
半导体
Ion implantation
Thermal annealing
Beryllium
Phosphor
Compound semiconductor
