期刊文献+

纳米薄膜厚度标准物质的均匀性及稳定性监测

Uniformity and stability test of nano-film thickness reference material
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摘要 通过选用X射线光电子能谱(XPS)测量方法,对上海市计量测试技术研究院所研制的纳米薄膜厚度标准物质的组成及化合态进行了分析,并考察了薄膜厚度的均匀性和稳定性。实验结果表明,所研制的标准物质的薄膜组成为氧化钽,薄膜的均匀性以及在监测期内的稳定性良好。该标准物质可以作为产品质量控制、设备校准以及测试方法验证的国家计量器具使用,完全满足标准物质使用要求。 In this paper, the composition and chemical state of the nano-iflm thickness reference material which developed by Shanghai Institute of Measurement and Testing Technology are analyzed by using X-ray photoelectron spectroscopy (XPS) method, and the uniformity and stability of iflm thickness are also investigated. The results show that the nano-iflm of the reference material is composed of tantalum pentoxide. The uniformity of the nano-film and the stability of the film during the monitoring period are good. The reference material can be used as the national measurement apparatus for the product quality control, instrument calibration and measurement method validation, which fully meet the requirements of the use of the reference material.
出处 《上海计量测试》 2015年第5期15-17,共3页 Shanghai Measurement and Testing
基金 上海市质量技术监督局科研项目(2013-49) 上海市科委标准化专项(13dz0502400)
关键词 纳米厚度薄膜 标准物质 均匀性 稳定性 nano-iflm thickness reference material uniformity stability
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参考文献3

  • 1徐勇军,李秀平,罗列,杨晓西,李永梅.XPS对多层膜中单层膜厚的测定[J].分析测试学报,2008,27(9):1005-1007. 被引量:3
  • 2国家标准物质研究中心.JJF1006-1994[S].北京:中国计量出版社.1994.
  • 3韩永志.标准物质定值原则和统计学原理[M].北京:中国计量出版社,2011.

二级参考文献11

  • 1蒋致诚.硬盘驱动器巨磁电阻(GMR)磁头:从微米到纳米[J].物理,2004,33(7):529-533. 被引量:6
  • 2高思田,叶孝佑,邵宏伟,杜华,金其海,杨自本,陈允昌.用于纳米级三维表面形貌及微小尺寸测量的原子力显微镜[J].制造技术与机床,2004(8):34-39. 被引量:7
  • 3KANG L, YOUNG B, LEE H, et al. Electrical characteristics of highly reliable ultra thin hafnium oxide gate dielectric [J]. IEEE Electron Device Lett, 2000, 21(4) : 181 -183.
  • 4LOMBARDO S, LAMAGNA A, SPINELLA C, ct al. Degradation and hard break down transient of thin gate oxides in metal-SiO2-Si capaciors: Dependence on oxide thickness[ J]. J Appl Phys, 1999, 86( 11 ) : 6382 - 6391.
  • 5MAO Lingfeng, TAN Changhua, XU Mingzhen. Thickness measurement for ultra thin-film insulator metal -oxide -semiconductor structure using Fowler - Nordheim tunneling current oscillations [ J]. J Appl Phys, 2000, 88 ( 11 ) : 6560 - 6563.
  • 6KOVER L. Report on the 22^nd IUVSTA workshop ‘X-ray photoelectron spectroscopy: from physics to dat' [ J]. Snrf Interfaee Anal, 2000, 29:671-716.
  • 7PETER J C. The thickogram: a method for easy film thickness measurement in XPS [ J]. Surf Interface Anal, 2000, 29 : 403 - 406.
  • 8FADLEY C S, BAIRD R J, SIEKHAUS W, et al. Surface analysis and angular distribution X-ray photoelectron spectroscopy[J]. J Eleetron Speetrosc Relat Phenom, 1974, 4:93 -137.
  • 9SHALLENBERGER J R. Oxide thickness determination by XPS, AES, SIMS, RBS and TEM [ M ]. Redwood City, CA: Charles Evans & Associates, 1998.
  • 10汪贵华,杨伟毅,常本康.变角XPS定量分析的研究[J].真空与低温,1999,5(4):242-245. 被引量:6

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