摘要
建立了3D-TSV(硅通孔)互连结构三维有限元分析模型,对该模型进行了热-结构耦合条件下的应力应变有限元分析,研究了TSV高度和直径对3D-TSV互连结构温度场分布及应力应变的影响。结果表明:随着TSV高度和直径的增大,3D-TSV叠层芯片封装整体、焊球、间隔层、芯片和TSV及微凸点处的最高温度均逐渐降低,TSV高度和直径的增加在一定程度上有利于降低封装体各部分最高温度;随着TSV高度的增加,TSV及微凸点互连结构内的应力应变呈增大趋势。
The 3D finite element analysis models of 3D-TSV（Through Silicon Via） interconnect structure were developed. By using ANSYS the finite element analysis of the stress and strain distributions in the model was performed under the condition of thermal-structure coupling. The influences of height and diameter of TSV on temperature field distribution and stress and strain of 3D-TSV,interconnect structure were studied. Results of study show that with the increase of height and diameter of TSV the highest temperatures in 3D-TSV stacked die package, solder ball, spacer, die, TSV and micro bumps are gradually decrease, the increase of height and diameter of TSV are beneficial to decrease the highest temperature of all parts of package in a certain degree. The stress and strain in TSV and micro bumps interconnect structure increase with increasing the height of TSV.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2014年第7期85-90,共6页
Electronic Components And Materials
基金
广西壮族自治区自然科学基金资助项目(No.2012GXNSFAA053234
2013GXNSFAA019322)
四川省教育厅科研资助项目(No.13ZB0052)
关键词
三维叠层芯片封装
硅通孔
热-结构耦合分析
温度场
有限元分析
应力应变
3D stacked IC package
through silicon via
thermal-structure coupling analysis
temperature field
finite element analysis
stress and strain
