摘要
In this study, the structure and quality controlled growth of InAs nanowires using Au catalysts in a molecular beam epitaxy reactor is presented. By tuning the indium concentration in the catalyst, defect-free wurtzite structure and defect-free zinc blende structure InAs nanowires can be induced. It is found that these defect-free zinc blende structure InAs nanowires grow along 〈110〉 directions with four low-energy {111} and two {110} side-wall facets and adopt the （111） catalyst/nanowire interface. Our structural and chemical characterization and calculations identify the existence of a catalyst supersaturation threshold for the InAs nanowire growth. When the In concentration in the catalyst is sufficiently high, defect-free zinc blende structure InAs nanowires can be induced. This study provides an insight into the manipulation of crystal structure and structure quality of III-V semiconductor nanowires through catalyst engineering.
在这研究，结构和用在一个分子的横梁取向附生反应堆的 Au 催化剂的 InAs nanowires 的 quality controlled 生长被介绍。由在催化剂调节铟集中，没有缺点的 wurtzite 结构和没有缺点的锌闪锌矿结构 InAs nanowires 能被导致。这些没有缺点的锌闪锌矿结构 InAs nanowires 沿着\成长，这被发现( \left\langle { \bar 1 \bar 10 } \right\rangle \)方向与四低精力{ 111 }并且二{ 110 }方面墙方面并且采用\( \left ({ \bar 1 \bar 1 \bar 1 } \right )\) catalyst/nanowire 接口。我们的结构、化学的描述和计算为 InAs nanowire 生长识别催化剂过度饱和阀值的存在。什么时候在里面在催化剂的集中足够地高，没有缺点的锌闪锌矿结构 InAs nanowires 能被导致。这研究通过催化剂工程提供卓见进晶体结构的操作和 IIIV 半导体 nanowires 的结构质量。
