摘要
Structural and optical properties of vertically aligned InAs quantum dots (QDs) were embedded in Al0.5Ga0.5As spacer layers. The aligned QDs were grown at 520℃ in the Stranski-Krastanow (S-K) growth mode of molecular beam epitaxy. To impro ve QD characteristics, we employed a size- and density-controlled growth procedu re in the upper layers. Measurements by reflection high-energy electron diffract ion (RHEED) and atomic force microscopy (AFM) showed that both the size and dens ity of the QDs. The temperature dependence of the wavelength-integrated photolum inescence (PL) intensity revealed the InAs QD emission.
Structural and optical properties of vertically aligned InAs quantum dots (QDs) were embedded in Al0.5Ga0.5As spacer layers. The aligned QDs were grown at 520℃ in the Stranski-Krastanow (S-K) growth mode of molecular beam epitaxy. To impro ve QD characteristics, we employed a size- and density-controlled growth procedu re in the upper layers. Measurements by reflection high-energy electron diffract ion (RHEED) and atomic force microscopy (AFM) showed that both the size and dens ity of the QDs. The temperature dependence of the wavelength-integrated photolum inescence (PL) intensity revealed the InAs QD emission.
基金
This work was supported by the Scientific Research Foundation for the Returmed Overseas Chinese Scholars,Education Ministry of China.
