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Improving the Thermal Stability of Cu_3N Films by Addition of Mn 被引量:1

Improving the Thermal Stability of Cu_3N Films by Addition of Mn
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摘要 Mn-doped Cu3N films were deposited by cylindrical magnetron sputtering equipment on the common glass at room temperature. The incorporation of Mn can change the preferred growth orientation from Cu-rich plane (111) to N-rich plane (100) due to the improvement of nitridation of Cu. The shrinkage of the lattice and the X-ray photoelectron spectroscopy results reveal that Mn should replace Cu atoms in the lattice or be segregated in the grain boundaries. The thickness of Mn-doped film is smaller than that of the pure one due to the less physisorption of N species among the columnar grains. The mean grain size and the energy gap become larger with increasing Mn concentration to 2.2 at.% and then decrease when the concentration of Mn is higher than 2.2 at.%. Notably, weak doping of 1.5 at.% Mn successfully promotes the decomposed temperature by -50℃. According to the results of XRD and SEM for Mn- doped films annealed in vacuum, a possible decomposed mechanism with increasing the annealing temperature is proposed. Mn-doped Cu3N films were deposited by cylindrical magnetron sputtering equipment on the common glass at room temperature. The incorporation of Mn can change the preferred growth orientation from Cu-rich plane (111) to N-rich plane (100) due to the improvement of nitridation of Cu. The shrinkage of the lattice and the X-ray photoelectron spectroscopy results reveal that Mn should replace Cu atoms in the lattice or be segregated in the grain boundaries. The thickness of Mn-doped film is smaller than that of the pure one due to the less physisorption of N species among the columnar grains. The mean grain size and the energy gap become larger with increasing Mn concentration to 2.2 at.% and then decrease when the concentration of Mn is higher than 2.2 at.%. Notably, weak doping of 1.5 at.% Mn successfully promotes the decomposed temperature by -50℃. According to the results of XRD and SEM for Mn- doped films annealed in vacuum, a possible decomposed mechanism with increasing the annealing temperature is proposed.
出处 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2015年第8期822-827,共6页 材料科学技术(英文版)
基金 supported by the Natural Science Foundation of Shandong Province(Grant Nos.ZR2013EMQ006,ZR2011EMZ001,ZR2011EMQ011) the National Natural Science Foundation of China(Grant Nos.51272117,51172115,60907007) the Research Award Fund for Outstanding Young Scientists of Shandong Province(Grant No.BS2013CL040) the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20123719110003) the Tackling Key Program of Science and Technology in Shandong Province(Grant No.2012GGX10218) the Application Foundation Research Program of Qingdao(Grant Nos.13-1-4-117-jch and14-2-4-29-jch)
关键词 Magnetron sputtering Cu3N film MN-DOPED Thermal stability Magnetron sputtering Cu3N film Mn-doped Thermal stability
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参考文献30

  • 1S. Terada, H. Tanaka, K. Kubota, J. Cryst. Growth 94 (1989) 567-568.
  • 2T. Maruyama, T. Morishita, Appl. Phys. Lett 69 (1996) 890-891.
  • 3Z.Q. Liu, W.J. Wang, S. Chao, S.K. Zheng, Thin Solid Films 325 (1998) 55-59.
  • 4J. Xiao, Y. Li, A. Jiang, J. Mater. Sci. Technol 27 (2011 ) 403-407.
  • 5G. Sahoo, S.R. Meher, M.K. Jain, Mater. Sci. Eng. B. Solid State Mater. Adv. Technol 191 (2015) 7--14.
  • 6M. Asano, K. Umeda, A. Tasaki, Jpn J. Appl. Phys 29 (1990) 1985-1986.
  • 7K.J. Kim, J.H. Kim, J.H. Kang, J. Cryst. Growth 222 (2001) 767-772.
  • 8H.B. Wu, W. Chen, J. Am. Chem. Soc 133 (2011) 15236-15239.
  • 9L Maya, J. Vac. Sci. Technol. A 11 (1993) 604-608.
  • 10T. Maruyama, T. Morishita, J. Appl. Phys 78 (1995) 4104-4107.

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