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磁控溅射制备铁掺杂氮化铜薄膜的研究 被引量：3

Study on Fe-doped Copper Nitride Films by Reactive Magnetron Sputtering
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摘要 采用反应磁控溅射法在氮气分压0.5Pa、基底温度100℃条件下,在玻璃基底上分别制备了氮化铜薄膜和铁掺杂氮化铜薄膜。XRD显示氮化铜薄膜择优(111)晶面生长,铁掺杂使氮化铜薄膜的结晶程度减弱。AFM显示铁掺杂使氮化铜薄膜粗糙度增加。铁掺杂不同程度地提高了氮化铜薄膜的沉积速率和电阻率。 Copper nitride film and Fe-doped copper nitride film are deposited on glass substrates by reactive magnetron sputtering at N2-gas partial pressure of 0. SPa and suhstrate temperature of 100℃. X-ray diffraction （XRD） shows that the copper nitride film growth prefers （111） direction, and the Fe-doped copper nitride film is weak crystalline. AFM （atomic force microscopy） shows that the roughness of Fe-doped copper nitride film increases. The deposition rate and the resistivity of Fe-doped Cu3N film increase.
作者 李兴鳌 刘祖黎 左安友 袁作彬 杨建平 姚凯伦
机构地区 华中科技大学物理系 湖北民族学院理学院
出处 《材料导报》 EI CAS CSCD 北大核心 2006年第12期141-143,共3页 Materials Reports
基金 湖北省教育厅重点项目(D200529002)资助
关键词 氮化铜薄膜 磁控溅射 电阻率 copper nitride film, magnetron sputtering, resistivity
分类号 O484.1 [理学—固体物理]
  • 相关文献

参考文献15

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  • 10岳光辉,闫鹏勋,刘金良.多晶氮化铜薄膜制备及性能研究[J].人工晶体学报,2005,34(2):344-348. 被引量：11

二级参考文献23

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共引文献24

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材料导报
2006年 第12期

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