摘要
We investigate the memory properties of the ITO/graphene oxide/Al diodes. It is found that the devices show different memory behaviors with the diverse geometry and thickness of Al. When the thickness of the Al electrode is relatively thick, the device of the cross-point Al electrode shows a three-level memory effect, and the counterpart device of the cross-bar Al electrode exhibits a volatile static random access memory effect. When the thickness of the AI electrode is thinner, the above devices demonstrate a flash memory effect. The different memory behaviors of ITO/GO/AI diodes are ascribed to the mode and degree of reduction and oxidation of GO.
We investigate the memory properties of the ITO/graphene oxide/Al diodes. It is found that the devices show different memory behaviors with the diverse geometry and thickness of Al. When the thickness of the Al electrode is relatively thick, the device of the cross-point Al electrode shows a three-level memory effect, and the counterpart device of the cross-bar Al electrode exhibits a volatile static random access memory effect. When the thickness of the AI electrode is thinner, the above devices demonstrate a flash memory effect. The different memory behaviors of ITO/GO/AI diodes are ascribed to the mode and degree of reduction and oxidation of GO.
基金
Supported by the National Basic Research Program of China under Grant Nos 2012CB723402 and 2014CB648300
the National Natural Science Foundation of China under Grant Nos 61204095 and 61475074
the National Science Fund for Excellent Young Scholars under Grant No 21322402
the Natural Science Foundation of Jiangsu Province under Grant No BK2012431,the Natural Science Foundation of the Education Committee of Jiangsu Province under Grant No 14KJB510027
the Ministry of Education of China under Grant No IRT1148
the Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions
