摘要
一锅法合成了镁掺杂的ZnO量子点,利用APTES对其进行表面包覆,并采用XRD、TEM、UV-Vis、PL和FTIR等对材料进行了表征。结果表明镁掺杂能明显增强荧光发光强度,在合适的掺杂浓度(30%)下其量子产率由11%增加到33%。通过APTES的表面包覆使镁掺杂的ZnO量子点具有良好的水溶性和荧光稳定性,可用于MCF-7细胞成像研究。
A one-pot method was developed for synthesizing Magnesium-doped ZnO quantum dots （QDs） capped with （3-aminopropyl）triethoxysilane （APTES）. The as-prepared quantum dots were characterized by XRD, TEM, UV-Vis, FL （fluorescent spectroscopy） and FTIR. The results show that the Mg-doped quantum dots exhibit greatly enhanced luminescent property and their quantum yield is increased from 11% for un-doped ZnO QDs to 33% for Mg-doped ZnO QDs at Mg-doping content of 30%. In addition, aqueous-stability is achieved by capping the Mg-doped ZnO QDs with APTES. The obtained APTES-capped Mg-doped ZnO QDs exhibit excellent water stability and retain visible emissions. The APTES-capped Mg-doped ZnO QDs demonstrate promising applications in MCF-7 cell labeling.
出处
《无机化学学报》
SCIE
CAS
CSCD
北大核心
2015年第8期1644-1650,共7页
Chinese Journal of Inorganic Chemistry
基金
黑龙江省教育厅科学技术研究基金(No.12541910)资助项目
