摘要
采用Sol-Gel法在Pt/Ti/SiO2/Si衬底上制备出未掺杂和掺杂Mg的(Ba0.5Sr0.5)0.85Pb0.15-TiO3薄膜.采用XRD、SEM和Agilent 4294A精密阻抗分析仪研究了Mg掺杂量对薄膜的结晶性,表面形貌和介电性能的影响.结果表明:随着Mg掺杂量的增加,PBST薄膜的介电常数减小,介电损耗降低,介电调谐量先减少后增加.当Mg掺杂量为0.8mol%时,PBST薄膜具有最大的优值因子.
（Ba0.5Sr0. 5）0.85Pb0.15TiO3 thin films doped by x（Mg）=0-0.8 mol% were fabricated by Sol-Gel method on Pt/Ti/SiO2/Si. The effect of Mg doping on the crystallization, structure and dielectric properties of PBST thin films were investigated by XRD, SEM, Agilent 4294A precision impedance analyzer. The results show that the dielectric constant and dielectric loss decreased with increasing amounts of Mg dopant; but the tunability were dropped first and risen then. The Mg-doped PBST thin film＇s figure of merit show maxi- mum value with the optimal ：c（Mg）=0.8%.
出处
《三峡大学学报（自然科学版）》
CAS
2012年第6期89-92,共4页
Journal of China Three Gorges University：Natural Sciences
基金
国家自然科学基金项目(50902085)
湖北省教育厅项目(Q20081304)
