期刊文献+

焦耳热效应引发的晶须生长机理研究 被引量:1

Mechanism investigation of whisker growth induced by Joule heating effect
在线阅读 下载PDF
导出
摘要 研究了Cu/Sn3.8Ag0.7Cu/Cu一维焊点在电流密度为5×103 A/cm2、环境温度为100℃作用下晶须的生长机理。研究结果表明,通电300 h后,在Cu/Sn3.8Ag0.7Cu/Cu焊点的阳极界面出现了一些小丘,而在焊点的阴极出现了一些裂纹;通电500 h后,焊点阴极界面的裂纹进一步扩展,而且在裂纹处发现了大量纤维状Sn晶须,其长度超过10μm;继续通电达到700 h后,Sn晶须的数量没有增加,同时停止生长。由于电迁移的作用,金属原子在电子风力的作用下由焊点的阴极向阳极进行了扩散迁移,进而在阴极处形成裂纹。随着裂纹逐渐扩展,导致该区域处的电流密度急剧增大,焦耳热聚集效应明显,为了释放应力,形成了纤维状的晶须。 Cu/Sn3.8Ag0.7Cu/Cu solder joint with current density of 5×103A/cm2 at 100℃ was investigated. Results show that after current stressing for 300 h, some hillocks occur at the anode interface and some cracks appear at the cathode interface. As the electromigration test goes on for 500 h, the cracks propagate along the cathode interface. Furthermore, a large quantity of Sn whiskers appears at the crack region, whose lengths are beyond 10μm. As the current stressing reaches 700 h, the total whisker quantity dosen’t increase, and stop growing. Due to the electromigration, the metal atoms migrate from the cathode side to the anode side by the electron wind force, resulting in the crack formation at the cathode interface. Therefore, the current density at the crack region increases, leading to much more Joule heat accumulation, to release the stress, some whiskers are formed in this crack region.
出处 《电子元件与材料》 CAS CSCD 2015年第6期74-77,共4页 Electronic Components And Materials
基金 国家电网公司"电网用智能材料若干基础研究"科技项目资助 国家自然科学基金资助(No.61474140)
关键词 焦耳热 电迁移 晶须 应力释放 无铅焊点 电流密度 Joule heating electromigration whisker stress release lead-free solder joint current density
  • 相关文献

参考文献13

  • 1LIANG S W, HSIAO H Y, CHEN C, et al. Nonuniform and negative marker displacements induced by current crowding during electromigration in flip-chip Sn-0.7Cu solder joints [J]. J Electron Mater, 2009, 38(12): 2443-2448.
  • 2KUAN W C, LIANG S W, CHEN C. Effect of bump size on current density and temperature distributions in flip-chip solder joints [J]. Microelectron Reliab, 2009, 49(5): 544-550.
  • 3LIANG S W, CHANG Y W, CHEN C, et al. Effect of migration and condensation of pre-existing voids on increase in bump resistance of flip chips on flexible substrates during electromigration [J]. J Electron Mater, 2008, 37(7):962-967.
  • 4GAN H, TU K N. Polarity effect of electromigration on kinetics of intermetallic compound formation in Pb-free solder; V-groove samples [J]. JAppl Phys, 2005, 97(6): 063514.
  • 5HE H W, .XU G C, GUO E Electmmigration-induced Bi-rich whisker growth in Cu/Sn-58Bi/Cu solder joints [J]. J Mater Sci, 2010, 45(2): 334-340.
  • 6何洪文,徐广臣,郭福.Cu/Sn-58Bi/Cu焊点在电迁移过程中晶须和小丘的生长[J].金属学报,2009,45(6):744-748. 被引量:5
  • 7田君,李东南,李巍,郝虎.钎料稀土相表面Sn晶须生长的研究[J].电子元件与材料,2011,30(9):47-49. 被引量:1
  • 8郝虎,史耀武,夏志东,雷永平,郭福.稀土相表面Sn晶须生长的研究[J].电子元件与材料,2009,28(8):35-38. 被引量:4
  • 9郝虎,李广东,史耀武,夏志东,雷永平.SnAgCuY钎料表面Sn晶须的旋转生长现象[J].电子元件与材料,2008,27(11):54-56. 被引量:4
  • 10~IE H W, Xu G c, HA() H, et al. Electromigmtion in lead-free Sn3.8Ag0.7Cu solder reaction couple [C]//2007 8th Intemational Conference on Electronics Packaging Technology ICEPT. NY, USA: IEEE, 2007: 258-261.

二级参考文献27

  • 1郝虎,田君,史耀武,雷永平,夏志东.SnAgCuY系稀土无铅钎料显微组织与性能研究[J].稀有金属材料与工程,2006,35(A02):121-123. 被引量:27
  • 2Lin Y W,Laj Y S,Lin Y L,Tu C T,Kao C R.J Electron Mater,2008;37:17
  • 3Tu K N.Phys Rey,1994;49B:2030
  • 4Kakeshita T,Kawanaka R,Hasegawa T.J Mater Sci,1982;17:2560
  • 5Hasiguti R R.Acta Metall,1955;3:200
  • 6Lin Y H,Hu Y C,Tsai C M,Kao C R,Tu K N.Acta Mater,2003;53:2029
  • 7Nah J W,Paik K W,Suh J O,Tu K N.J Appl Phys,2003;94:7560
  • 8Gan H,Tu K N.J Appl Phys,2005;97:063514-1
  • 9Gu X,Chart Y C.J Electron Mater,2008;37:1721
  • 10Miao H W,Duh J G.Mater Chem Phys,2001:71:255

共引文献9

同被引文献10

引证文献1

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部