摘要
利用分子束外延 ( MBE)技术生长了 Ge组份为 0 .1～ 0 .46的 Si1-x Gex 外延层。X射线衍射测试表明 ,Si Ge/Si异质结材料具有良好的结晶质量和陡峭界面 ,其它参数也可准确控制。通过 X射线双晶衍射摇摆曲线方法 ,研究了经 70 0°C、80 0°C和 90 0°C退火后应变 Si Ge/Si异质结材料的热稳定性。结果表明 ,随着退火温度的提高 ,应变层垂直应变逐渐减小 ,并发生了应变驰豫 ,导致晶体质量退化 ;且 Ge组分越小 ,Si1-x Gex 应变结构的热稳定性越好 ;
Molecular Beam Epitaxy (MBE) has been used to grow strained Si 1-x Ge x (0 1 0 46) alloys The samples have been characterized by X ray double crystal diffraction The results show that the strained SiGe alloys have good crystalline quality and abrupt interfaces X ray double crystal diffraction rocking curve have been used to investigate the structure stability and stain relaxation of Si 1-x Ge x/Si stained layer, which was previously grown on Si (001), during annealing.It has been shown that the perpendicular strain values decrease as the annealing temperature is raised The stain layer was partially relaxed after annealing at different conditions, which causes the deterioration of the crystalline quality Si 1-x Ge x/Si stained layer is more thermally stable when the germanium fraction of SiGe layer is small At room temperature,the strain layer is stable
出处
《微电子学》
CAS
CSCD
北大核心
2002年第2期120-123,共4页
Microelectronics
基金
模拟集成电路国家重点实验室资助项目 (99Js0 95 .1)
