摘要
采用量子动力学模型研究单材料和三材料的石墨烯纳米条带场效应管(GNRFETs)在不同掺杂情况下的弹道输运特性,模型基于非平衡格林函数方程(NEGF)以及自洽的泊松方程的量子数值解.结果证明:三材料线性掺杂的石墨烯纳米条带场效应管(TL-GNRFET)不仅能够有效地抑制短沟道效应(SCE)和漏极势垒降低效应(DIBL),而且相对于其它几种结构而言,它有更好的亚阈值斜率以及更高的开关电流比.另外,还研究了非对称栅结构对石墨烯场效应管的影响,结果表明,当上栅和下栅同时向源端移动的时候,可以改善器件的电流开关比.
Ballistic performance of single-material-gate and triple-material-gate graphene nanoribbon field effect transistors （GNRFETs）with various doping profiles is studied in a quantum kinetic model based on non-equilibrium Green’s functions （NEGF） solved self-consistently with Poisson’ s equations. It shows that triple-material-gate GNRFET with linear doping（ TL-GNRFET） exhibits significant advantage in reducing SCEs and DIBL effects, as well as achieving better subthreshold slope and better on/off current ratio. In addition, asymmetric gate underlap is also discussed. It is revealed that as top and bottom gates are both shifted towards source on/off state current performance is improved.
出处
《计算物理》
CSCD
北大核心
2015年第1期115-126,共12页
Chinese Journal of Computational Physics
基金
Supported by Natural Science Fouudation of Higher Eduction in Jiangsu Province(10KJD510006)
