摘要
本文以原子层沉积超薄氧化铝(Al2O3)为过渡层,采用射频反应磁控溅射法在硅半导体基片上制备了颗粒致密并具有(011)择优取向的二氧化钒(VO2)薄膜.该薄膜具有显著的绝缘体—金属相变特性,相变电阻变化超过3个数量级,热滞回线宽度约为6°C.基于VO2薄膜构建了平面二端器件并测试了不同温度下I-V曲线,观测到超过2个数量级的电流跃迁幅度,显示了优越的电致相变特性.室温下电致相变阈值电压为8.6V,电致相变弛豫电压宽度约0.1 V.随着温度升高到60°C,其电致相变所需要的阈值电压减小到2.7 V.本实验制备的VO2薄膜在光电存储、开关、太赫兹调控器件中具有广泛的应用价值.
Quality enhanced VO2 thin films have been sputtering deposited on silicon substrates by introducing an ultrathin Al2 O3 buffer between the substrate and the film. With a preferred orientation （011）, the VO2 films have an excellent thermal-induced metal-insulator transition （MIT）. The electrically-driven MIT （E-MIT） characteristics have also been investigated by applying voltage to VO2 thin film based two-terminal device at particular temperatures. Sharp jumps in electric current are observed in the I-V curve with a variation of amplitude by two orders. The threshold voltage decreases with increasing temperature. At room tempature, the threshold voltage is 8.6V and the phase transition ccurs in a voltage width of only 0.1V. With the sharp and fast phase change, the VO2 thin films can be used in ultrafast switching electronic devices.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2015年第1期277-281,共5页
Acta Physica Sinica
基金
国家自然科学基金重点项目(批准号:61131005)
教育部科学技术研究重大项目(批准号:313013)
国家高技术研究发展计划(批准号:2011AA010204)
教育部新世纪优秀人才资助计划(批准号:NCET-11-0068)
四川省杰出青年学术技术带头人计划(批准号:2011JQ0001)
高校博士点专项科研基金(批准号:20110185130002)资助的课题~~
关键词
二氧化钒
电致相变
硅基片
氧化铝
vanadium dioxide, electrically-driven metal-insulator transition, silicon substrate, aluminium oxide
