摘要
为了研究气体绝缘开关设备(GIS)母线接头的过热性故障形成机理,基于多场耦合有限元法建立了GIS梅花接头温升计算模型。该模型通过对结构场分析计算触指与导体间的接触电阻(ECR)与接触热阻(TCR),运用电流传导分析计算了功率损失并作为热源代入温度场计算接头温升。进行了稳态电流温升实验,验证了所提出计算模型的有效性。基于该模型分析了导体插入深度与短路负荷电流对GIS母线接头温升的影响,结果表明短路负荷电流由于作用时间短而不会造成母线接头的热损伤,导体对接深度不足引起的接触点异常温升是导致GIS母线接头过热性故障的直接原因。
To understand the formation mechanism of overheating fault in bus connector of gas insulated switchgear（GIS）, we developed a 3-D finite element model based on the coupled field theory to calculate the temperature rise in the bus connector. In the model, electrical contact resistance（ECR） and thermal contact resistance（TCR） are calculated based on structural field, and power loss, calculated based on current conduction analysis, is taken as the heat source in connector＇s temperature field for calculating the temperature rise. The model is validated by steady-current temperature-rise tests, and it is adopted for analyzing the influences of conductor insertion depth and short-circuit load current on connector temperature rise. It is concluded that short-circuit current will not thermally damage bus contact due to its short duration, and the depth of the inserting conductor is the direct cause of overheating faults in GIS bus connectors.
出处
《高电压技术》
EI
CAS
CSCD
北大核心
2014年第11期3445-3451,共7页
High Voltage Engineering
基金
中央高校基本科研业务费专项资金(2012207020208)~~
关键词
耦合场
有限元
梅花接头
GIS
温升计算
过热性故障
coupled fields
finite element
butt-connector
GIS
temperature rise calculation
over heat fault
