摘要
晶化点是集成电路金属化工艺中温度过高、合金导电性差的一种征兆,也会导致集成电路出现开路、短路等失效情形。总结了集成电路中晶化点缺陷的形成机理,对产生晶化点的工艺原因进行了探讨,并结合工程案例对晶化点缺陷导致的集成电路失效情形及有关失效机理进行了分析。最后,从工艺上提出若干改进这一缺陷的建议。
Crystallization point is a sign of high temperature and poor conductivity of integrated circuit metall^zatlon process, which could lead to open circuit, short circuit occurred in integrated circuit. The formation mechanism of crystallization point in integrated circuit was summarized. The causes of producing crystallization point in the production process were investigated. The failure mechanisms caused by crystallization points were analyzed combining two engineering cases. Finally, several suggestions for improvement of the defect in the production process were put forward.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2014年第9期87-90,共4页
Electronic Components And Materials
基金
国家国防科技工业局技术基础科研资助项目(No.Z132012A001)
国家自然科学基金资助项目(No.61201028)
关键词
集成电路
晶化点
缺陷
失效
金属化工艺
可靠性
integrated circuit
crystallization point
defect
failure
metallization process
reliability
