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量子阱结构中的等效宽度分析

Effective Well Width Analysis in Quantum Well Structures
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摘要 在有效质量近似下 ,分析了有限深势阱的电子基态能级 ,并和有相同能级的无限深势阱模型作比较 ,用数值方法得到了不同电场下两者之间的阱宽的关系 ,首次得出经验公式 ,发现结果与前人的实验和理论结果吻合得很好 .分析了两种模型下的波函数和结合能 ,证实了有外加电场时采用零电场下的等效宽度的合理性 . Under the effective mass approximation,some empirical formulas are obtained numerically concerning the correlations between the quantum well widths of finite potential barrier structure and those of infinite potential barrier structure under the circumstance that the ground state energies of two different models are equal in electric field,which match well with the results given by others.Then the wave functions and binding energies of excitons are analyzed,verifying the rationality to replace the effective width in electric field with that in zero field.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第7期725-730,共6页 半导体学报(英文版)
基金 国家自然科学基金资助项目 (批准号 :6 98770 17)~~
关键词 量子阱 等效宽度 结合能 GAAS/GAALAS 光学性质 quantum well effective width binding energy GaAs/GaAlAs
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参考文献15

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