摘要
砷化镓PHEMT功率器件具有工作频率高,输出功率密度大,效率高,功率增益高等特点。我们研制的0.5μm栅长GaAs PHEMT小功率晶体管,栅宽1mm,直流跨导250ms/mm,栅漏反向击穿电压大于13V,在20GHz下最大可用增益为8dB,X波段输出功率为0.8W/mm,可应用于22GHz以下的窄带功率放大器和18GHz以下的宽带功率放大器。
GaAs PHEMT power transistor has a high operation frequency, high output power density, high efficiency and high gain. A small power PHEMT device with a gate length 0. 5μm and gate periphery 1mm was developed. It has a DC Gm 250ms/mm, BVgd not less than 13V, Gmax 8dB at 20GHz and output power 0. 8/mm at X band. It can be applied to narrow band power amplifier below 22GHz and wide band amplifier below 18GHz.
出处
《电子元器件应用》
2002年第4期17-18,33,共3页
Electronic Component & Device Applications
