摘要
研究了LEC-SI-GaAs单晶热处理前后深能级陷阱的变化,比较了原生晶体在不同条件的热退火后SI-GaAs单晶中深能级陷阱的特性,分析了产生变化的原因,并讨论了LEC-SI-GaAs中两个主要深能级陷阱EL2和EL6的可能构型。
The annealed behaviors of the deep level trap in LEC SI-GaAs are investigated in thispaper. The changes of the deep level trap in SI-GaAs single crystal in different annealed conditionshave been compared. The reasons of the change have been analysis. The probably microscopic struc-tures of the two main deep level trap EL2 and EL6 in the LEC SI-GaAs are discussed.
出处
《半导体技术》
CAS
CSCD
北大核心
2002年第7期10-12,17,共4页
Semiconductor Technology
