摘要
用卢瑟福背散射技术研究了Ni基体中掺B对离子溅射产额的影响。实验结果发现掺B后Ni原子的溅射产额Y比未掺B的纯Ni样品有明显减少。虽然这种溅射产额差值Y与Painter和Averill(P-A)理论模型分析结果定性符合,但实验产额减小值却大于P-A模型的预言。为解释实验结果,注意到溅射靶点表面形貌对减小或增大溅射产额的明显作用,认为实际的产额减小很可能是由于结合能和表面形貌等因素的协同效应。
The effect of dopant boron in bulk nickel on sputtering yield has been investigated by the Rutherford backscattering spectroscopy technique. It was shown that a decrease in sputter-ing yield with respect to pure nickel target can be described qualitatively by Painter and Ave-rill's model, but the decrease in our experiment appeared larger than that estimated by P-A model. The obvious effect of textured surface upon the reduction of sputtering of B-doped Ni target has been shown. It is conjectured that this reduction of net sputtering yield is very probably the result of a surface topography-binding energy combined effect.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1991年第10期1723-1728,共6页
Acta Physica Sinica
基金
国家自然科学基金
