摘要
在HFCVD系统中采用B2O3作为掺杂源制备了B掺杂CVD金刚石厚膜,利用X-射线衍射仪研究了B掺杂对CVD金刚石厚膜应力的影响。结果显示,B元素的掺杂改变了金刚石膜的成分和结构,膜中非晶态碳含量随着掺杂浓度的增加而增加。在低掺杂时CVD金刚石厚膜成核面上的应力状态为压应力,在高掺杂时应力状态为张应力,张应力值随着掺杂浓度的增加而增加。掺杂CVD金刚石厚膜生长面的应力为张应力,在高掺杂时的张应力值较高。
Boron-doped diamond thick films were prepared using electron assisted chemical vapour deposition （EACVD） method on Mo substrates. The influence of doping on stress in CVD diamond films was investigated with X-ray diffraction. The results show that the sp2 carbon content will increase and the crystal size will decrease with the doping level increases. On the nucleation surface, the stress in CVD diamond films is compressive when the B2O3 consistency in C2H5OH is less than 1000 mg/kg, and the stress becomes tensile when the B2O3 consistency in C2H5OH is more than 6000 mg/kg. On the growth surface,the tensile stress in the films is high when the B2O3 consistency in C2H5OH is more than 10000 mg/kg.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
2008年第5期1010-1013,共4页
Bulletin of the Chinese Ceramic Society
基金
国家自然科学基金资助项目(No:50605032)
江苏省自然基金资助项目(No:BK2006189、BK2007193)
