摘要
本文研究了SiO_xN_y薄膜的微观结构和电流传输行为,并提出一个新的,用于解释SiO_xN_y薄膜的电流传输,特别对于外加高场直到介质膜发生本征击穿前的电流传输行为的模型。理论与实验符合较好。采用新模型满意地解释了膜的l-V特性中出现的电流增加和陷阱台阶现象,并对外加电场和电子陷阱对电流传输行为的影响进行了讨论。
The microstructure and current transport behavior in the thermally nitrided silicon oxide (SiO_xN_y) thin films have been studied and a new model is proposed to explain the current transport behavior of the films. In particular, the model includes the case in which the external applied high field rises up to the value just before the occurance of intrinsic breakdown. The theoretical result of the new model agrees well with the experiment. Finally, the significant current enhancement and trapping ledge phenomenon in the I-V characteristics of the films have been explained satisfactorily using this new model, and the influences of the external applied field and the electron trap on the current transport behavior in the films are also discussed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1991年第2期289-296,共8页
Acta Physica Sinica
基金
中国科学院科学基金
