摘要
——用PECVD技术在低温、低压和低功率密度条件下获得了优质氮氧化硅(Si_xO_yN_x)薄膜,并成功地应用于InSb-MIS单元器件的研制.X光电子能谱和红外光谱分析表明Si_xO_yN_z膜具有复杂的空间结构.
Using PECVD technique, high quality Si_xO_yN_z films have been obtained at low temperature, low pressure and low r. f. power density, and successfully applied in the development of InSb-MIS single-element devioes. XPS and IR spectra show that Si_xO_yN_z films have complicated space structures.
出处
《红外研究》
CSCD
北大核心
1989年第6期409-415,共7页
