摘要
本文概述了基于大规模集成电路制造工艺发展起来的各种新型功率器件的结构、性能水平以及今后的发展趋势,重点是场控器件。
The structures and performances of various types of new power devices based on the LSI IC manufacturing technology, and their future tendency are described with emphasis on the FET controlled devices,
出处
《微电子学》
CAS
CSCD
1991年第2期12-23,共12页
Microelectronics
关键词
电力电子器件
半导体器件
集成器件
PID (Power Integrated Device), MCT (MOS Controlled Thyristor), SIT (Static Induction Transistor), VDMOS, IGBT
