摘要
本文采用光学传输矩阵元的方法设计了一种集成型反射式多量子阱器件,并给出了理论计算结果。采用MOCVD生长方法制作了该器件,它由n型多层增透介质膜、i型多量子阱、p型多层高反射率介质膜所组成。测试了该器件的光电流谱和反射率谱,并与理论结果作了比较,二者附合得很好。这种器件可以发展成兼具调制、开关、双稳复合功能的反射式集成器件。
The optical transmission matrix method has been used to design an integrated reflectionMQW device.The device was made in a MOCVD equipment by growing an MQW betweena high-reflectance stack and anti-reflectance layers. The photocurrent and reflectivity spectraof the device have been measured and compared with the theoretical calculation results.Closeagreement was demontrated among them. It can be expected to make an integrated reflectiondevice with complex functions,such as modulation,switching and bistability.
