摘要
本文详细叙述了减小双极超高速IC器件的横向尺寸和纵向尺寸的技术,着重在多晶硅基极接触、多晶硅发射极接触、开槽隔离方面作了具体介绍;对八十年代具有代表性的先进双极工艺,如PSA、SICOS、SST、SDK和深槽隔离技术作了详尽的叙述。最后,比较了采用这些工艺所制造的双极器件及电路的性能参数。
A detailed description of technologies for reducing lateral and vertical dimensions of very high speed bipolar ICs is given in the paper, with emphasis on techniques of polysilicon base contact, poly Si emiter contact and trench isolation. PSA, SICOS, SST,SDX and trench isolation, all typical advanced technologies in the 1980s, are also characterized. Finally, a comparison of performance parameters of bipolar devices and circuits manufactured with these technologies is made.
出处
《微电子学》
CAS
CSCD
1991年第1期30-40,共11页
Microelectronics
关键词
双极型
集成电路
IC器件
Very high speed bipolar IC, PSA, SST, SICOS, SDX, Deep groye isolation
