摘要
采用XPS技术和相应的化学位移理论及谱峰拟合方法研究了a-Si∶H薄膜。本文报道了含氧a～si∶H中可能出现和存在的不同化学构态,深度分布和不同衬底材料导致的不同界面特性和表面特性。
a-Si:H Thin film has been studied by means of xps and chemical states existing in the thin film have been analysed by the chemical shift and fitting mechanism.Chemical state profiles and the characteristics of surface and interface between the thin film and substrates have been reported.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
1991年第4期363-367,共5页
Acta Energiae Solaris Sinica
