摘要
GaAs基半导体激光器芯片在空气中解理后,解理腔面会被空气氧化形成腔面缺陷,在腔面形成的缺陷严重影响了器件的寿命。用GaAs衬底表面模拟半导体激光器的解理腔面,研究了不同的光学薄膜对GaAs表面特性的影响。研究结果表明暴露在大气中的GaAs表面会形成Ga2O3、As2O3和As2O5缺陷。在表面镀含氧光学膜的GaAs表面上会形成少量Ga2O3缺陷,不形成As2O3和As2O5缺陷,在表面镀ZnSe光学薄膜的GaAs表面没有形成Ga2O3缺陷,也没有形成As2O3和As2O5缺陷。在GaAs表面上蒸镀ZnSe光学薄膜能有效地抑制GaAs表面缺陷的形成,提高半导体激光器的寿命。
The surfaces of cleaved GaAs were modified with different optical ZnSe films,grown by vacuum evapora- tion. The electronic structures of the GaAs surfaces, with and without ZnSe coating, were characterized with X-ray photo- electron spectroscopy. The results show that the ZnSe films significantly increases the oxidation resistance of the GaAs sur- face, and reduces the surface density of defects. For example, a large amount of defects, possiblly caused by formation of Ga203,As203,and As2Os, were observed on the GaAs wafer exposed in air; while only a very low density of Ga203-in- duced defect was found to exist on the ZnSe-coated GaAs surfaces. We suggest that the ZnSe coating may considerably im- proves the surface oxidation resistance of GaAs, and increases the reliability and life-time of the GaAs laser devices.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2013年第4期368-370,共3页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金项目(61107054)
吉林省科技发展计划项目(2012014124)
