摘要
介绍了K4 玻璃与硅的阳极焊过程 ,分析了阳极焊的结合机理并考察了温度和电压对焊接过程的影响。结果显示 ,在适宜的温度和电压下 ,可获得良好的K4 玻璃 硅片焊接接头。焊接温度为 30 0～ 40 0℃、焊接电压为 70 0～ 80 0V时 ,焊合率较高 ,且焊接接头的拉伸强度高于母材的拉伸强度。K4 玻璃良好的离子导电特性 。
Anodic bonding process between K 4 glass and silicon sheet is described. Effecf of bonding temperature and voltage on anodic bonding is investigated,and mechanism of anodic bonding is analyzed. The results indicate that good bonding could be realized under proper temperature and voltage conditions.The good bonding between K 4 glass and silicon sheet by low temperature field assisted process is attributed to the ionic transport property of K 4 glass.High bonding percentage is achieved at temperature of 300～400℃,voltage of 700～800V,and the strength of the joint is higher than that of K 4 glass or silicon.
出处
《材料开发与应用》
CAS
2002年第1期18-20,23,共4页
Development and Application of Materials
