摘要
本文对光化学气相淀积 Si Ge/Si过程中气相反应机制和表面反应历程进行了分析和讨论 .利用表面反应动力学的有关理论 ,结合光化学气相淀积的特点 ,推导出光化学气相淀积Si Ge/Si过程中的生长速率和生长压力的关系 .并给出该理论结果和实际实验结果的比较 .
The kinetic and mechanism of gas-reaction and surface-reaction in growth of SiGe/Si by photochemical vapor deposition were discussed.Based theory of surface-reaction and combining with the characteristic of photochemical vapor deposition,the relationship of growth rate and growth pressure was deduced.The compare of theory relationship and experiment result was given.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2002年第3期293-296,共4页
Acta Photonica Sinica
基金
国防军事电子预研 8.5 .6 .5资助项目
