摘要
报道了用分子束外延的方法制备 3英寸HgCdTe薄膜的研究结果 ,获得的HgCdTe外延材料均匀性良好 ,在直径 70mm圆内 ,组份标准偏差率为 1.2 % ,对应 80K截止波长偏差仅为 0 .1μm .经过生长条件的改进 ,表面形貌获得了大幅度改善 ,缺陷密度小于 30 0cm-2 ,缺陷尺寸小于 10 μm 。
The recent results on molecular beam epitaxial growth of 3-in HgCdTe wafers were reported. The composition uniformity in the wafer was found to be 1.2% in a diameter of 70 mm, corresponding to a deviation in cutoff wavelength of 0.1 μm at 80 K. By refining the growth conditions, the surface morphology was significantly improved. The defect density was reduced to below 300cm -2, and the defect size was suppressed to be smaller than 10μm. The material quality can meet the requirements of FPA fabrications.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2002年第1期65-70,共6页
Journal of Infrared and Millimeter Waves
基金
中国科学院知识创新工程资助项目~~
