摘要
报道了用MBE的方法 ,在ZnCdTe衬底上制备Hg1-xCdxTe薄膜的位错密度的研究结果 .研究发现Hg1-xCdxTe材料的位错密度与ZnCdTe衬底的表面晶体损伤、Hg1-xCdxTe生长条件以及材料组分密切相关 .通过衬底制备以及生长条件的优化 ,在ZnCdTe衬底上生长的长波Hg1-xCdxTe材料EPD平均值达到 4.2× 10 5cm-2 ,标准差为 3.5× 10 5cm-2 ,接近ZnCdTe衬底的位错极限 .可重复性良好 ,材料位错合格率为 73.7% 。
The dislocation density of MBE grown Hg1 - x Cd-x Te on ZnCdTe substrates was studied. It was found that the dislocation density in Hg1 - x Cd-x Te was sensitive to the damage layers of ZnCdTe substrates, growth conditions of HgCdTc as well as compositions. By optimizing the substrate preparation procedures and growth conditions, the averaged EPD value of 4.2 x 10(5)cm(-2) with the standard deviation of 3.5 x 10(5)cm(-2) was obtained, close to the dislocation density limit of substrate. The reproducibility was good with a yield of 73. 7 % as screened by dislocation density. The results should be able to meet the requirements for FPAs of high performance.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2002年第1期23-27,共5页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金 (批准号 6 942 5 0 0 2 )
国家 86 3(批准号 86 3 30 7 16 10 )资助项目~~
