摘要
GaN具有禁带宽度大、热导率高、电子饱和漂移速度大和介电常数小等特点,在高亮度发光二极管、短波长激光二极管、高性能紫外探测器和高温、高频、大功率半导体器件等领域有着广泛的应用前景。介绍了GaN基半导体材料的制备方法,异质结构以及在光电子和微电子器件领域的应用,并讨论了今后的发展趋势。
GaN have the characteristics of wide bandgap,high thermal conductivity,large electron saturation
shift velocity and low dielectric constant.They have wide applications in fields such as high brightness light emitting diodes,short wavelength laser diodes,high performance UV detector,and high temperature,high frequency,large power semiconductor devices.This paper introduces the growth methods and heterostructure of GaN semiconductor materials and their applications in optoelectronic and microelctronic fields,followed by our opinions on further studies.
出处
《材料导报》
EI
CAS
CSCD
2002年第1期31-35,共5页
Materials Reports
基金
国家863项目新材料领域课题(715-011-0033)
国家自然科学基金(69976008)
