摘要
对扩展电阻温度 (SRT)传感器的阻温特性 (R -T)进行了研究。实验结果表明 ,器件的结构尺寸、衬底的掺杂浓度大大地影响着器件的最高工作温度 (Tmax) ,而工艺条件的影响很小。适当小的n+ 圆形半径和适当高的衬底掺杂可使SRT传感器的正温度系数 (PTC)工作区在 2mA的正向偏置电流下拓宽至 4 0
The resistance-temperature ( R-T ) characteristics of silicon Spreading-Resistance Temperature (SRT) sensor have been investigated.Experiment results show that dimensions of the device structure,substrate doping strongly affect the maximum operating temperature,while processing conditions only have a slight effect.With appropriately small circular n+ region and high substrate doping,the SRT sensor can function at temperatures up to 400℃ at a low current of 2?mA.
出处
《仪表技术与传感器》
CSCD
北大核心
2002年第1期10-12,共3页
Instrument Technique and Sensor
