摘要
在适当条件下氧化多孔硅是提高多孔硅发光强度的良好途径。首次采用含CH3CSNH2的HF酸水溶液作为氧化剂对初始多孔硅进行了湿法阳极氧化,大大改善了多孔硅的发光强度,并研究了氧化电流密度、氧化温度、氧化时间等一系列因素对氧化多孔硅光致发光强度的影响。实验发现,在电流密度1mA/cm2,氧化液温度60℃,氧化时间为10min的条件下,可以获得最强光致发光;在此最优条件下得到的氧化样品较初始样品发光增强了18倍。
Oxidizing porous silicon in proper condition is a good approach to improve PS photoluminescence intensity. We use electrolyte containing CH3CSNH2 to oxidize initial PS, which improved photoluminescence intensity of PS greatly. We also studied the effects of oxidizing current density, and oxidizing temperature, oxidizing time etc. It is testified that the best intensity of PL can be obtained when oxidizing for 10 minutes in 60°C oxidizing solution using 1 mA/cm2 current density, and we obtain photoluminescence intensity 18 times than that of original porous silicon.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2004年第8期951-954,共4页
Journal of Optoelectronics·Laser
