摘要
在器件的高温工艺过程中多晶硅再结晶,晶粒不断地长大,多晶硅层厚因高温氧化而减薄直到完全耗尽。在多晶硅层完全去除后在硅衬底中诱生出高密度的氧化层错起吸除中心作用。多晶硅能促进硅片内的氧沉淀成核和生长,起内吸杂作用。本文提出了多晶硅持续吸杂的机理。
The Polysilicon recrystallizes an d its crystalline grain grows up during the high temperature process of devices.Polysilicon lay er is thinned down and removed thorou ghly by the high temperature oxidation.High density of stacking faults induced in the silicon substr ate act as gettering centers even after the polysilicon is removed.The polysilicon can enhance oxygen pre cipitation nucleating and grow -ing,acting as the intrinsic gettering.The mechanism of the duration of polysilicon gettering is proposed.
出处
《功能材料与器件学报》
CAS
CSCD
2001年第4期401-404,共4页
Journal of Functional Materials and Devices
关键词
多晶硅吸杂
内吸杂
增强吸杂
氧沉淀
氧化层错
洁净层
polysilicon gettering
intrinsic gettering
enhanced gettering
oxygen precipitation
stacking fault
denuded zone
