摘要
利用等离子体增强化学气相沉积 (PECVD)技术制备了SnO2 薄膜。实验中通过改变磁镜场的磁镜比和磁场大小 ,研究了弱磁场对SnO2 薄膜方块电阻及电阻分布的影响。实验结果表明 ,随着磁镜比和磁场强度的增加 ,SnO2 薄膜的方块电阻在降低 ,且电阻分布变得比较均匀 ;但是 ,当磁镜比超过 5 .5时 ,SnO2
The SnO 2 thin films are prepared by a plasma enchanced chemical vapor deposition (PECVD) method. The effect of magnetic mirror field on the electric properties of SnO 2 thin films is investigated.Our experimental results show that the square resistance of SnO 2 thin films decreases,and the axial distribution of the square resistance of SnO 2 thin films become more uniform,with the increase of the magnetic mirror ratio and the magnetic field intensity. However when the magnetic mirror ratio exceeds 5.5,the axial distribution of the resistance of SnO 2 thin films become non uniform.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2001年第6期603-605,共3页
Journal of Functional Materials
基金
国家自然科学基金资助项目 (1 97750 1 6)
