摘要
本文报道了采用提拉法在不同加热系统中和不同生长气氛下进行的LiCaAlF6 晶体生长的实验 ,以探索高质量晶体的生长条件 ,并讨论了在晶体生长过程中晶体内部和表面上的某些缺陷的形成原因。为了获得高质量的晶体 ,抑制原材料的氧化和挥发 ,实现生长过程的稳定控制 ,是晶体生长过程中不可忽视的三要素。在较小的温度梯度、较高真空度 (2× 10 - 2 Pa)、敞开式保温体系、较高控温精度 (± 0 .1℃ )及充入保护气体CF4 条件下 ,可生长高质量的LiCaAlF6 晶体。
The experiments of growing LiCaAlF 6 crystal by using Czochralski method in the different growth conditions and atmospheres were carried out in order to optimise the crystal growth for high quality crystals.The origin of some defects formation was discussed.It is worthwhile to point out that the reduction of oxidation and volatilization of raw materials,accurate temperature control are the main factors for growing crystal.High quality LiCaAlF 6 crystals could be grown with low temperature gradient,high vacuum (2×10 -2 Pa),open-type system,accurate temperature control(±0.1℃)and with CF 4 atmosphere.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2001年第3期284-288,共5页
Journal of Synthetic Crystals
